Part Number Hot Search : 
0M100 C3500 1725737 BRF1060 485EC BI400 ICM72 HER303
Product Description
Full Text Search

CY7C1141V18 - 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165

CY7C1141V18_465172.PDF Datasheet

 
Part No. CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY7C1141V18-300BZI CY7C1143V18-300BZI CY7C1145V18-300BZI CY7C1156V18-300BZI CY7C1141V18-300BZXC CY7C1143V18-300BZXI CY7C1145V18-300BZXI CY7C1145V18-300BZXC CY7C1143V18-300BZXC CY7C1141V18-300BZXI CY7C1143V18-300BZC CY7C1156V18-300BZXI CY7C1156V18-300BZXC CY7C1145V18-300BZC CY7C1141V18-300BZC CY7C1156V18-300BZC
Description 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165

File Size 948.50K  /  28 Page  

Maker

Cypress Semiconductor Corp.



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: CY7C1143KV18-400BZC
Maker: Cypress Semiconductor Corp
Pack: ETC
Stock: Reserved
Unit price for :
    50: $0.00
  100: $0.00
1000: $0.00

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY7C1141V18-300BZI CY7C1143V18-300BZI CY7C1145V18-30 Datasheet PDF Downlaod from Datasheet.HK ]
[CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY7C1141V18-300BZI CY7C1143V18-300BZI CY7C1145V18-30 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for CY7C1141V18 ]

[ Price & Availability of CY7C1141V18 by FindChips.com ]

 Full text search : 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165


 Related Part Number
PART Description Maker
CY7C1263KV18-400BZC CY7C1265KV18-550BZC 36-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
Cypress
CYPT1543AV18-250GCMB CYPT1545AV18-250GCMB CYRS1543 72-Mbit QDRII SRAM Four-Word Burst Architecture with RadStop™ Technology
Cypress
CY7C1562XV18-450BZXC 72-Mbit QDRII Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
Cypress
CY7C2163KV18-450BZXI CY7C2163KV18-550BZXI CY7C2165 18-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Cypress
CY7C1241V18 CY7C1243V18 CY7C1241V18-300BZC CY7C124 36-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的国防评估报告⑩- II SRAM4字突发架构(2.0周期读写延迟
Cypress Semiconductor Corp.
CY7C1263XV18 CY7C1265XV18-633BZXC CY7C1263XV18-600 36-Mbit QDR? II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
36-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
Cypress Semiconductor
CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构(2字突发结18 -兆位的DDR - II SRAM的)
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
UPD44325362F5-E50-EQ2 UPD44325082 UPD44325082F5-E4 36M-BIT QDRII SRAM 2-WORD BURST OPERATION
NEC[NEC]
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
IDT
http://
Integrated Device Technology, Inc.
CY7C1415BV18-250BZI CY7C1415BV18-167BZI 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300 72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
CY7C1514V18 CY7C1514V18-200BZC CY7C1514V18-250BZC 72-Mbit QDR-II?SRAM 2-Word Burst Architecture
72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
72-MBIT QDR-II⒙ SRAM 2-WORD BURST ARCHITECTURE
72-Mbit QDR-II SRAM 2-Word Burst Architecture
CYPRESS[Cypress Semiconductor]
 
 Related keyword From Full Text Search System
CY7C1141V18 circuit CY7C1141V18 Differential CY7C1141V18 Specification CY7C1141V18 查询 CY7C1141V18 baumer ivo gxmmw
CY7C1141V18 ICPRICE CY7C1141V18 afe + homeplug av CY7C1141V18 taping code CY7C1141V18 header CY7C1141V18 Driver
 

 

Price & Availability of CY7C1141V18

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.3341498374939